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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU932RP DESCRIPTION *High Voltage *DARLINGTON APPLICATIONS *High ruggedness electronic ignitions *High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VALUE 500 UNIT V Collector Current-peak Base Current w w scs .i w 450 5 15 30 1 5 125 150 -40~150 V V A .cn mi e A A A IBM PC Tj Tstg Base Current-peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU932RP TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 10mH 450 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8 A; IB= 150mA 1.8 V VBE(sat) ICES ICEO Base-Emitter Saturation Voltage IC= 8 A; IB= 150mA VCE= 500V;VBE= 0 VCE= 500V;VBE= 0;Tj= 125 VCE= 450V;IB= 0 2.2 1.0 5.0 1.0 V Collector Cutoff Current mA Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain VECF C-E Diode Forward Voltage ww w scs .i IF= 10A IC= 5A; VCE= 10V .cn mi e 300 50 mA 2.8 V isc Websitewww.iscsemi.cn |
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